TSM2N60S - 600V N-Channel Power MOSFET

Taiwan Semiconductor Company

Datasheet Details

Part number	TSM2N60S
Manufacturer	Taiwan Semiconductor ↗ Company
File Size	401.21 KB
Description	600V N-Channel Power MOSFET
Datasheet	TSM2N60S_TaiwanSemiconductorCompany.pdf

The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Contin.

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Published: Mar 5, 2010 |