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XP135A1145SR - Power MOSFET

General Description

The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Two FET devices are built-into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Key Features

  • Low On-State Resistance (Nch) : Rds (on) = 0.033Ω@ Vgs = 10V : Rds (on) = 0.045Ω@ Vgs = 4.5V Low On-State Resistance (Pch) : Rds (on) = 0.065Ω@ Vgs = -10V : Rds (on) = 0.110Ω@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : 4.5V (Nch) : -4.5V (Pch) N-Channel/P-channel Power MOSFET DMOS Structure Two FET Devices Built-in Package : SOP-8.
  • PIN.

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XP135A1145SR Power MOSFET ETR1116_001 ■GENERAL DESCRIPTION The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ■FEATURES Low On-State Resistance (Nch) : Rds (on) = 0.033Ω@ Vgs = 10V : Rds (on) = 0.045Ω@ Vgs = 4.5V Low On-State Resistance (Pch) : Rds (on) = 0.065Ω@ Vgs = -10V : Rds (on) = 0.110Ω@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : 4.5V (Nch) : -4.