:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
. Suitable for TV Sound Output, Vert. Deflection
Output.
. Designed for Complementary Use with 2SC2194A.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VcBO
VCEO
VeBO
IC
IE
PC
Tj
Tstg
RATING
-60
-50
-1.5
1.5
1.5
150
-55-150
Unit in mm
9.9MAX. 03.2±O.2
1^:
sz
nt
0/66
UNIT
xrrrjtH I
3°
1. EMITTER
2. BASE
3. COLLECTOR
Collector Connected to Tab.
JEDEC
TO-2 2
TOSHIBA
Weight
2-10F1A
1.37g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Breakdown Voltage
DC Current Gain
Collector-Emitter
Saturation Voltage
ICBO
lEBO
v (BR) CEO
hFE
VCE(sat)
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
VBE
fT
Cob
TEST CONDITION
VCE=-50V, I E=0
V£B=-5V, I C=0
IC=-10mA, Ib=0
VcE=-2V, I c=-150mA
IC=-1A, Ib=-0.1A
MIN.
-
-
TYP. MAX. UNIT
- -1.0 tik
_ -1.0 uA
-50 - - V
70 - 240
-
- -1.0
V
VCE=~10V, Ic=-10mA
-0.50
V C E=-10V, Ic=-100mA
50
VcB="10V, lE=0, f=lMHz
-
-0.60 -0.70 V
100 - MHz
30 - PF
1111,1111111111111,1111111111111
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