2SB834 - Silicon PNP Transistor

Toshiba

Datasheet Details

C.3 MAX. Unit in mm 3.6±C.
Low Collector Saturation Voltage.
' Vce (sat) =-1-07 (Max. ) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880.

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