* . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359 INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SB997
2SB998
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Silicon pnp transistor.
: E557 2SB998 2SB999I SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICA.
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2SB991 PNP Transistor (INCHANGE)
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2SB993 PNP Transistor (INCHANGE)
2SB993 SILICON PNP TRANSISTOR (Toshiba)
2SB993 SILICON POWER TRANSISTOR (SavantIC)
2SB994 PNP Transistor (INCHANGE)
2SB994 SILICON PNP TRANSISTOR (Toshiba)
2SB994 SILICON POWER TRANSISTOR (SavantIC)
