* . High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2S
2SC109A
40.94 KB
Silicon npn epitaxial type transistor.
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC1 09A, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm ^9.39 MA.
📁 Related Datasheet
2SC1096 PNP / NPN EPITAXIAL SILICON TRANSISTOR (ETC)
2SC1096 SILICON POWER TRANSISTOR (SavantIC)
2SC1098 PNP/NPN SILICON EPITAXIAL TRANSISTOR (ETC)
2SC1098 SILICON POWER TRANSISTOR (SavantIC)
2SC1098A SILICON POWER TRANSISTOR (SavantIC)
2SC1000 Silicon NPN Transistor (Toshiba)
2SC1000 Silicon NPN Transistor (ETC)
2SC1001 SILICON NPN TRANSISTOR (Toshiba)
2SC1002 Silicon NPN Power Transistors (SavantIC)
2SC1004 SILICON POWER TRANSISTOR (SavantIC)
