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Toshiba Electronic Components Datasheet

2SC6072 Datasheet

Multi-chip Device Silicon NPN Epitaxial Transistor

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TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type
2SC6072
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC6072
Unit: mm
High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Ta = 25°C
Collector power dissipation
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
180
180
5
2.0
1.0
2.0
20
150
55~150
V
V
V
A
A
W
W
°C
°C
1: BASE
2: COLLECTOR
3: EMITTER
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 180 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 1 A
IC = 1 A, IB = 0.1 A
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 0.3 A
VCB = 10 V, IE = 0, f = 1MHz
Min Typ. Max Unit
⎯ ⎯ 5.0 μA
⎯ ⎯ 5.0 μA
180
V
100 320
50 ⎯ ⎯
⎯ ⎯ 1.0 V
⎯ ⎯ 1.5 V
200 MHz
16 pF
Downloaded from Elcodis.com electronic components distributor
1
2009-12-21
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

2SC6072 Datasheet

Multi-chip Device Silicon NPN Epitaxial Transistor

No Preview Available !

Marking
2SC6072
C6072
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Downloaded from Elcodis.com electronic components distributor
2
2009-12-21
Free Datasheet http://www.datasheet4u.com/


Part Number 2SC6072
Description Multi-chip Device Silicon NPN Epitaxial Transistor
Maker Toshiba
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2SC6072 Datasheet PDF






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