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2SD1052 - NPN Transistor

Key Features

  • : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX. ) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.3MAX ^3.6±Q2.

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Datasheet Details

Part number 2SD1052
Manufacturer Toshiba
File Size 111.67 KB
Description NPN Transistor
Datasheet download datasheet 2SD1052 Datasheet

Full PDF Text Transcription for 2SD1052 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1052. For precise diagrams, and layout, please refer to the original PDF.

2SD1052 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . FEATURES : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A...

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. FEATURES : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.3MAX ^3.6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO vEB0 50 V 50 Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range IB T-i Tstg 0.5 1. BASE 1.5 2. collector Cheat sink) 3. EMITTER 30 JEDEC 150 °C EIAJ TO— 220AB SC—46 -55-150 °C TOSHIBA 2-10A1A ELECTRICAL CHARACTERISTICS (Ta=2

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