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2SD1353 - Silicon NPN Transistor

Key Features

  • . High DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low VcE(sat) of 1 . 0V (Max. ) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 0z. z±az.

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Datasheet Details

Part number 2SD1353
Manufacturer Toshiba
File Size 91.91 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1353 Datasheet

Full PDF Text Transcription for 2SD1353 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1353. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED TYPE 2SD1353 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low VcE(sat) o...

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gh DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low VcE(sat) of 1 . 0V (Max.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 0z.z±az MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 50 Collector-Emitter Voltage VcEO 50 Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Ta=25°C Tc=25 C IB 0.5 1.5 30 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature 150 Storage Temperature Range Tstg -55~150 TOSHIBA 2-10K1A ELECTRICAL CHARACTERISTICS (Ta=25 C) Weight : 2 . Og CHARACTERISTIC SYMBOL TEST CONDITION M

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