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2SD1356 - Silicon NPN Transistor

Key Features

  • . High Power Dissipation : P C=30W (Tc=25°C) . Good Linearity of hEE . Complementary to 2SB996 . Recommended for 20.
  • 25W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 0&2±a2.

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Datasheet Details

Part number 2SD1356
Manufacturer Toshiba
File Size 89.77 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1356 Datasheet

Full PDF Text Transcription for 2SD1356 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1356. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1356 POWER AMPLIFIER APPLICATIONS. FEATURES . High Power Dissipation : P C=30W (Tc=25°C) . Good Linearity of hEE . Complementary to ...

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pation : P C=30W (Tc=25°C) . Good Linearity of hEE . Complementary to 2SB996 . Recommended for 20 — 25W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 0&2±a2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO v EBO ic IB PC T j T stg RATING 80 80 5 4 0.4 UNIT V V V A A 30 W 150 -55-150 °C °C 1. BASE 2. collector Cheat sink) 3. EMITTER TOSHIBA Weight : 2.1 2-10K.1A ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC

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