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2SD524 - NPN Transistor

Key Features

  • High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A).
  • Low Saturation Voltage : VCE (sat)=l- 5v dc=5A).
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistor.

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Datasheet Details

Part number 2SD524
Manufacturer Toshiba
File Size 114.15 KB
Description NPN Transistor
Datasheet download datasheet 2SD524 Datasheet

Full PDF Text Transcription for 2SD524 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD524. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A) • Low Satur...

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High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A) • Low Saturation Voltage : VCE (sat)=l- 5v <Max -> dc=5A) • Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VcBO VCEO VEBO IB ?C L stg RATING 80 80 UNIT V 15 0.2 100 150 -65^150 -COLLECTOR L BASE 2. EMITTER COLLECTOR (CASE) JEDEC TO EIAJ TB — 3 TOSHIBA 21 A 1

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