2SD688
2SD688 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
- High DC Current Gain : h FE=1000 (Min.)
(VCE=2V, I C=1A)
- Low Saturation Voltage
: v CE(sat)=l-5V (Max.) (I C=1A)
- plementary to 2SB678
Unit in mm
.09.39MAX. j2fe.45MAX. j2fo.45 a
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
SYMBOL VCBO v CEO Vebo ic
RATING UNIT
Collector Power Dissipation
Ta=25°C Tc=25°C ?C
Junction Temperature Storage Temperature Range
T.i
T stg
°C
-65^175 °C
EQUIVALENT CIRCUIT
COLLECTOR
BASE
<
1 EMITTER 2. BASE 3. COLLECTOR(CASE)
- 39
EIAJ
5, TB
- 5B
TOSHIBA
- 8 B 1A
Weight : 1.13g
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC...
