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HN1D03FU Toshiba (https://www.toshiba.com/) Silicon Epitaxial Planar Type Diode

Toshiba
Description TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU HN1D03FU Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Built in anode common and cathode common. Note1: For detail information, please contact our sales Unit: mm Unit 1  Low forward voltage  Fast reverse recovery time  Small total capacitance Unit 2  Low forward voltage  Fast reverse recovery time  Small total c...
Features (Note 2) 150 °C Tj (Note 3) 125 Storage temperature Tstg (Note 2) −55 to 150 °C Tstg (Note 3) −55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the oper...

Datasheet PDF File HN1D03FU Datasheet 510.22KB

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