HN1D01F Description
HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application Unit: mm HN1D01F is posed of 2 unit of anode mon. VF (3) = 0.92 V (typ.) Fast reverse recovery time.
- Part: HN1D01F
- Manufacturer: Toshiba
- Size: 402.87 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN1D01FE | Silicon Epitaxial Planar Type Diode |
| HN1D01FU | Silicon Epitaxial Planar Type Diode |
| HN1D02F | Silicon Epitaxial Planar Type Diode |
| HN1D02FE | Silicon Epitaxial Planar Type Diode |
| HN1D02FU | Silicon Epitaxial Planar Type Diode |