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HN1D01F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01F
Ultra High Speed Switching Application
Unit: mm
HN1D01F is composed of 2 unit of anode common.
Low forward voltage
: VF (3) = 0.92 V (typ.)
Fast reverse recovery time : trr = 1.6 ns (typ.)
Small total capacitance : CT = 2.2 pF (typ.