HN1D01F
HN1D01F is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
Unit: mm
- HN1D01F is posed of 2 unit of anode mon.
- Low forward voltage
: VF (3) = 0.92 V (typ.)
- Fast reverse recovery time : trr = 1.6 ns (typ.)
- Small total capacitance : CT = 2.2 p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300 (- ) m A
Average forward current
100 (- ) m A
Surge current (10 ms)
IFSM
2 (- )
Power dissipation
PD (Note 3)
300 m W
Junction temperature
Tj (Note 1)
°C
SM6
Tj (Note 2)
JEDEC
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Storage...
