HN1D01FU
HN1D01FU is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
- AEC-Q101 Qualified (Note1)
- HN1D01FU is posed of 2 unit of anode mon.
- Low forward voltage:
VF (3) = 0.92 V (typ.)
- Fast reverse recovery time: trr = 1.6 ns (typ.)
- Small total capacitance: CT = 2.2 p F (typ.)
Note1: For detail information, please contact our sales.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300 (- ) m A
Average forward current
100 (- ) m A
Surge current (10 ms)
IFSM
2 (- )
Power dissipation
PD (Note 4)
200 m W
Junction temperature
Tj (Note 2)
°C
Tj (Note 3)
Storage temperature
Tstg (Note...
