HN1D01FE Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application z HN1D02FU is posed of 2 unit of cathode mon. z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2p F (typ.) Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P 300- m A 100- m A 2- 100- - m W 1. CATHODE 2. CATHODE 3. ANODE 4. CATHODE 5. CATHODE 6. ANODE Junction temperature Tj °C Storage temperature Tstg - 55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 1-2X1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.003g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or...