HN1D03FU
HN1D03FU is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
- AEC-Q101 Qualified (Note1)
- Built in anode mon and cathode mon. Note1: For detail information, please contact our sales
Unit: mm
Unit 1
- Low forward voltage
- Fast reverse recovery time
- Small total capacitance Unit 2
- Low forward voltage
- Fast reverse recovery time
- Small total capacitance
Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 p F (typ.)
Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: CT = 2.2 p F (typ.)
Unit 1, Unit 2 mon Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms)
VRM VR IFM IO IFSM
300 (- ) m A
100 (- ) m A
2 (- )
US6
―
JEITA
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TOSHIBA
1-2T1D
Weight: 6.2mg (typ.)
Power dissipation
PD (Note 4)
200 m W
Junction temperature
Tj (Note...
