HN1D02F Description
HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Ultra High Speed Switching Application Unit: mm The HN1D02F is posed of two (2) cathode mon units. VF (3) = 0.90 V (typ.) Fast reverse recovery time.
- Part: HN1D02F
- Manufacturer: Toshiba
- Size: 350.22 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN1D02FE | Silicon Epitaxial Planar Type Diode |
| HN1D02FU | Silicon Epitaxial Planar Type Diode |
| HN1D01F | Silicon Epitaxial Planar Type Diode |
| HN1D01FE | Silicon Epitaxial Planar Type Diode |
| HN1D01FU | Silicon Epitaxial Planar Type Diode |