HN1D02F
HN1D02F is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
Unit: mm
- The HN1D02F is posed of two (2) cathode mon units.
- Low forward voltage
: VF (3) = 0.90 V (typ.)
- Fast reverse recovery time : trr = 1.6 ns (typ.)
- Small total capacitance : CT = 0.9 p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300 (- ) m A
Average forward current
100 (- ) m A
Surge current (10 ms)
IFSM
2 (- )
Power dissipation
PD (Note 3)
300 m W
Junction temperature
Tj (Note 1)
°C
Tj (Note 2)
JEDEC
―
Storage temperature
Tstg (Note...
