HN1D02FE - Silicon Epitaxial Planar Type Diode

Toshiba

Datasheet Details

Part number	HN1D02FE
Manufacturer	Toshiba
File Size	231.25 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	HN1D02FE Datasheet

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Other Datasheets by Toshiba

Part Number	Description
HN1D02F	Silicon Epitaxial Planar Type Diode
HN1D02FU	Silicon Epitaxial Planar Type Diode
HN1D01F	Silicon Epitaxial Planar Type Diode
HN1D01FE	Silicon Epitaxial Planar Type Diode
HN1D01FU	Silicon Epitaxial Planar Type Diode

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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application HN1D02FE Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF (3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P 80 V 300* mA 100* mA 2* A 100** mW 1. ANODE 2. ANODE 3. CATHODE 4. ANODE 5. ANODE 6.