HN1D02FE Description
TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application HN1D02FE Unit: mm z The HN1D02FU is posed of 2 mon cathode units. VF (3) = 0.90V (typ.) z Fast reverse recovery time.
HN1D02FE is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
| Part Number | Description |
|---|---|
| HN1D02F | Silicon Epitaxial Planar Type Diode |
| HN1D02FU | Silicon Epitaxial Planar Type Diode |
| HN1D01F | Silicon Epitaxial Planar Type Diode |
| HN1D01FE | Silicon Epitaxial Planar Type Diode |
| HN1D01FU | Silicon Epitaxial Planar Type Diode |
TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application HN1D02FE Unit: mm z The HN1D02FU is posed of 2 mon cathode units. VF (3) = 0.90V (typ.) z Fast reverse recovery time.