HN1D02FE
HN1D02FE is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
Unit: mm z The HN1D02FU is posed of 2 mon cathode units. z Low forward voltage
: VF (3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VR IFM IO IFSM P
300- m A
100- m A
2-
100-
- m W
1. ANODE 2. ANODE 3. CATHODE 4. ANODE 5. ANODE 6. CATHODE
Junction temperature Storage temperature
Tj
°C
JEDEC
―
Tstg
- 55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-2X1B temperature/current/voltage and the significant change in
Weight: 0.003g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
- : These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those for a single diode.
- - : Total...
