HN1D03F
HN1D03F is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
- Built in anode mon and cathode mon.
Unit 1
- Low forward voltage
- Fast reverse recovery time
- Small total capacitance
Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 p F (typ.)
Unit 2
- Low forward voltage
- Fast reverse recovery time
- Small total capacitance
Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: CT = 2.2 p F (typ.)
Unit: mm
Unit 1, Unit 2 mon Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300 (- ) m A
Average forward current
100 (- ) m A
Surge current (10 ms)
IFSM
2 (- )
Power dissipation
PD (Note 3)
300 m W
JEDEC
―
JEITA
SC-74...
