HN1D02FU
HN1D02FU is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applicatio
- AEC-Q101 Qualified (Note1)
- HN1D02FU is posed of 2 unit of cathode mon.
- Low forward voltage
: VF (3) = 0.90 V (typ.)
- Fast reverse recovery time : trr = 1.6 ns (typ.)
- Small total capacitance : CT = 0.9 p F (typ.)
Unit: mm
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300- m A
Average forward current
100- m A
Surge current (10ms)
IFSM
2-
Power dissipation
PD (Note 4)
200 m W
Junction temperature
Tj (Note 2)
°C
Tj (Note 3)
Storage temperature
Tstg (Note...
