HN1D04FU Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application z Low forward voltage : VF(3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9p F (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 300- m A 100- m A 2- 200- - m W °C - 55 to 150 °C US6 1.ANODE1 2.CATHODE2 3.ANODE4 CATHODE3 4.ANODE3 5.CATHODE4 6.CATHODE1 ANODE2 Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2T1F reliability significantly even if the operating conditions (i.e. operating Weight: 6.8 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 50% of those of the single diode. - - : Total rating Electrical Characteristics (Q1, Q2, Q3, Q4 mon; Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery...