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HN1D05FE Datasheet - Toshiba

Silicon Epitaxial Planar Type Diode

HN1D05FE Features

* (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Small total capacitance: Ct = 4.3 pF (typ.) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N.C. 3: Cathode2 4: Anode2 5:

HN1D05FE Datasheet (213.32 KB)

Preview of HN1D05FE PDF

Datasheet Details

Part number:

HN1D05FE

Manufacturer:

Toshiba ↗

File Size:

213.32 KB

Description:

Silicon epitaxial planar type diode.

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HN1D05FE Silicon Epitaxial Planar Type Diode Toshiba

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