Datasheet Summary
Switching Diodes Silicon Epitaxial Planar
1. Applications
- High-Voltage Switching
2. Features
(1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Small total capacitance: Ct = 4.3 pF (typ.)
3. Packaging and Internal Circuit
ES6
1: Anode1 2: N.C. 3: Cathode2 4: Anode2 5: N.C. 6: Cathode1
©2022-2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-10
2023-10-27 Rev.1.0
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