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HN1D05FE - Silicon Epitaxial Planar Type Diode

Features

  • (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ. ) (4) Fast reverse recovery time: trr = 0.5 µs (typ. ) (5) Small total capacitance: Ct = 4.3 pF (typ. ) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N. C. 3: Cathode2 4: Anode2 5: N. C. 6: Cathode1 ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-10 2023-10-27 Rev.1.0 HN1D05FE 4. Absolute Maximum Ratings (Note) (Unless othe.

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Datasheet Details

Part number HN1D05FE
Manufacturer Toshiba
File Size 213.32 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet HN1D05FE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes Silicon Epitaxial Planar HN1D05FE 1. Applications • High-Voltage Switching 2. Features (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Small total capacitance: Ct = 4.3 pF (typ.) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N.C. 3: Cathode2 4: Anode2 5: N.C. 6: Cathode1 ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-10 2023-10-27 Rev.1.0 HN1D05FE 4.
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