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HN1D05FE Toshiba (https://www.toshiba.com/) Silicon Epitaxial Planar Type Diode

Title 400 V/0.1 A SWITCH SOT-563
Description Switching Diodes Silicon Epitaxial Planar HN1D05FE 1. Applications • High-Voltage Switching 2. Features (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Small total capacitance: Ct = 4.3 pF (typ.) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N.C. 3: Cathode2 4: Anode...
Features (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Small total capacitance: Ct = 4.3 pF (typ.) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N.C. 3: Cathode2 4: Anode2 5: N.C. 6: Cathode1 ©2022-2023 1 Toshiba Electron...

Datasheet PDF File HN1D05FE Datasheet - 213.32KB
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4000 units: 0.0306 USD
8000 units: 0.03 USD
12000 units: 0.0283 USD
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HN1D05FE Distributor

Distributor Stock Price BuyNow
Distributor
TTI
0
4000 units: 0.0306 USD
8000 units: 0.03 USD
12000 units: 0.0283 USD
Toshiba America Electronic Components

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Avnet Americas
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400000 units: 0.02381 USD
40000 units: 0.02437 USD
32000 units: 0.02511 USD
24000 units: 0.02567 USD
16000 units: 0.02641 USD
8000 units: 0.02771 USD
4000 units: 0.02846 USD
Toshiba America Electronic Components

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