HN2D01F Toshiba (https://www.toshiba.com/) Silicon Epitaxial Planar Type Diode

Description HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.  Low forward voltage : VF (3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) r...
Features to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual r...

Datasheet PDF File HN2D01F Datasheet 523.26KB

HN2D01F   HN2D01F   HN2D01F  

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