RN4607 Toshiba (https://www.toshiba.com/) Silicon NPN/PNP Epitaxial Type Transistor

Description TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4607 Unit: mm 1  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and iniaturize equipment. Eq...
Features e Corporation Start of commercial production 1988-11 2019-11-01 RN4607 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation Junction temperature Storage temperature range PC * Tj Tstg 300 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the applicati...

Datasheet PDF File RN4607 Datasheet 698.83KB

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