SSM3J338R mosfet equivalent, silicon p-channel mosfet.
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (ty.
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2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
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