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SSM3K345R - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM3K345R
Manufacturer	Toshiba ↗
File Size	430.08 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K345R-Toshiba.pdf

SSM3K345R Product details

Features

(1) 1.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3K345R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.3.0 SSM3K345R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Char.

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Published: Jul 27, 2019 |