Datasheet Summary
posite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier
1. Applications
- DC-DC Converters
2. Features
(1) N-channel MOSFET and a schottky barrier diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V)
(2) 1.8-V gate drive voltage.
2.2. Diode Features
(1) Low forward voltage: VF = 0.51 V (typ.) (@IF = 500 mA)
3. Packaging and Internal Circuit
1.Anode 2.N.C. 3.Drain 4.Source 5.Gate 6.Cathode
UDFN6
4....