SSM6H19NU - DC-DC Converters

Product Overview

Toshiba

Part number	SSM6H19NU
Manufacturer	Toshiba
File Size	297.51 KB
Description	DC-DC Converters
Datasheet	SSM6H19NU Datasheet
Additional preview pages of the SSM6H19NU datasheet.

(1) N-channel MOSFET and a schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ. ) (@VGS = 3.6 V) (2) 1.8-V gate drive voltage. 2.2. Diode Features (1) Low forward voltage: VF = 0.51 V (typ. ) (@IF = 500 mA) 3. Packaging and Internal Circuit SSM6H19NU 1.Anode 2.N. C. 3.Drain 4.Source 5.Gate 6.Cathode UDFN6 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25.
) C.

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Published: Jul 19, 2023 |