SSM6J507NU mosfet equivalent, silicon p-channel mosfet.
(1) 4 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = .
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2. Features
(1) 4 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 2.
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