SSM6J511NU mosfet equivalent, silicon p-channel mosfet.
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assi.
* Power Management Switches
2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
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