Datasheet Summary
MOSFETs Silicon P-Channel MOS
1. Applications
- BATFETs
- Power Management Switches
2. Features
(1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance
: RDS(ON) = 26 mΩ (typ.) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ.) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ.) (@VGS = -8.5 V,ID = -3.0A)
3. Packaging and Pin Assignment
WCSP6C
A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain
4....