SSM6J771G - Silicon P-Channel MOSFET

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Toshiba

Part number	SSM6J771G
Manufacturer	Toshiba
File Size	222.32 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6J771G Datasheet
Additional preview pages of the SSM6J771G datasheet.

(1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ. ) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ. ) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ. ) (@VGS = -8.5 V,ID = -3.0A) 3. Packaging and Pin Assignment SSM6J771G WCSP6C A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDS.

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Published: Dec 15, 2023 |