SSM6J771G mosfet equivalent, silicon p-channel mosfet.
(1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance
: RDS(ON) = 26 mΩ (typ.) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ.) (@.
* BATFETs
* Power Management Switches
2. Features
(1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) .
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