SSM6J801R Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J801R 1. Applications • Power Management Switches 2.

Datasheet Details

(1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-12-19 Rev.3.0 SSM6J801R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteri.