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SSM6J808R - Silicon P-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4-V drive (3) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ. ) (VGS = -10 V) RDS(ON) = 35 mΩ (typ. ) (VGS = -4.5 V) RDS(ON) = 38 mΩ (typ. ) (VGS = -4 V) 3. Packaging and Internal Circuit SSM6J808R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6J808R,LF SSM6J808R,LXGF SSM6J808R,LXHF.
  • YES YES (Note 1) General Use Unintended Use A.

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Datasheet Details

Part number SSM6J808R
Manufacturer Toshiba
File Size 373.29 KB
Description Silicon P-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J808R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4-V drive (3) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) RDS(ON) = 35 mΩ (typ.) (VGS = -4.5 V) RDS(ON) = 38 mΩ (typ.) (VGS = -4 V) 3. Packaging and Internal Circuit SSM6J808R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6J808R,LF SSM6J808R,LXGF SSM6J808R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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