SSM6J808R
SSM6J808R is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4-V drive (3) Low drain-source on-resistance
: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) RDS(ON) = 35 mΩ (typ.) (VGS = -4.5 V) RDS(ON) = 38 mΩ (typ.) (VGS = -4 V)
3. Packaging and Internal Circuit
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain
TSOP6F
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM6J808R,LF SSM6J808R,LXGF SSM6J808R,LXHF
- YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
©2018-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-09
2021-05-28 Rev.5.0
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-40
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note...
