SSM6J801R
SSM6J801R is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
TSOP6F
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016 Toshiba Corporation
Start of mercial production
2016-10
2016-12-19 Rev.3.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -20 V
Gate-source voltage
VGSS
-8/+6
Drain current (DC) Drain current (pulsed)
(Note 1) (Note 1), (Note 2)
ID IDP
-6.0 -24.0
Power dissipation
(Note 3)
1.5 W
Power dissipation t = 10 s
(Note 3)
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under...
