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SSM6J801R - Silicon P-Channel MOSFET

Features

  • (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-12-19 Rev.3.0 SSM6J801R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteri.

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Datasheet Details

Part number SSM6J801R
Manufacturer Toshiba
File Size 289.24 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J801R 1. Applications • Power Management Switches 2. Features (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-12-19 Rev.3.0 SSM6J801R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS -8/+6 Drain current (DC) Drain current (pulsed) (Note 1) (Note 1), (Note 2) ID IDP -6.0 -24.
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