SSM6J825R Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS SSM6J825R 1. Applications • Power Management Switches 2.

Datasheet Details

(1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment TSOP6F SSM6J825R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-12 2021-11-02 Rev.1.0 SSM6J825R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit.