SSM6J825R mosfet equivalent, silicon p-channel mosfet.
(1) 4.0-V drive (2) Low drain-source on-resistance
: RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
3. P.
* Power Management Switches
2. Features
(1) 4.0-V drive (2) Low drain-source on-resistance
: RDS(ON) = 86 mΩ (max) (.
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