Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V)
3. Packaging and Pin Assignment
UDFN6
1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1
©2016 Toshiba Corporation
Start of mercial production
2015-12
2016-08-31 Rev.3.0
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