Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)
Note 1: For detail information, please contact our sales.
3. Packaging and Pin Assignment
UDFN6
1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1
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Toshiba Electronic Devices & Storage Corporation
2021-01-07 Rev.2.0
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