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TC58NVG0S3HBAI4 Datasheet 1G BIT (128M x 8-BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

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General Description

The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.

The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: 2176 bytes  64 pages).

Overview

TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M  8 BIT) CMOS NAND E.

Key Features

  • Organization Memory cell array Register Page size Block size.
  • x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC  2.7V to 3.6V Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF) Program/Erase time Auto Page Program Auto Block Erase Operating cu.

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