TC58NVG0S3HBAI4

The TC58NVG0S3HBAI4 is 1G BIT (128M x 8-BIT) CMOS NAND E2PROM designed by Toshiba.

Product Overview

Toshiba

Datasheet Details

Part number	TC58NVG0S3HBAI4
Manufacturer	Toshiba
File Size	671.57 KB
Description	1G BIT (128M x 8-BIT) CMOS NAND E2PROM
Datasheet	TC58NVG0S3HBAI4-Toshiba.pdf
Additional preview pages of the TC58NVG0S3HBAI4 datasheet.

Product details

Description

The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.

Features

Organization Memory cell array Register Page size Block size.
x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC  2.7V to 3.6V Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF) Program/Erase time Auto Page Program Auto Block Erase Operating cu.

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Other Datasheets by Toshiba

TC58NVG0S3HBAI6 - 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HTA00 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
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TC58NVG0S3AFT00 - 1 GBit CMOS NAND EPROM
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TC58NVG0S3ETA00 - 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Published: Jun 10, 2014 |