TC58NVG6DDJTA00 Datasheet | Toshiba

DESCRIPTION The TC58NVG6DD is a single 3.3 V 64 Gbit (77,054,607,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (16384 + 1280) bytes × 256 pages × 2130 blocks. The device has two 17664-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 17664-byte increments. The Erase operation is implemented in a single block unit (4 Mbytes + 320 Kbytes: 17664 bytes × 256 pages). The TC58NVG6DD is a serial-type memory device which utilizes the DQ pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES - Organization Device capacity Register Page size Block size - TC58NVG6DDJTA00 17664 × 256 × 2130 × 8 bits 17664 × 8 bits 17664 bytes (4M + 320 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output mand control Number of valid blocks Min 2018 blocks Max 2130 blocks Power supply VCC = 2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle 50 μs typ. (TBD) 100 μs max (TBD) 20 ns min 1400 μs/page typ.(TBD) 5 ms/block typ.(TBD) TBD m A max (per 1 chip) TBD m A max (per 1 chip) TBD m A max (per 1 chip) TBD μA max (per 1 chip) - - - - - Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby Package - - - (Weight: TBD g typ.) FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND MENTS (17). 2011-07-27C Free Datasheet http://../ TOSHIBA CONFIDENTIAL PIN ASSIGNMENT (TOP VIEW) ×8 ×8 Vcc Vss NC NC...