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TC58NYG2S0HBAI6 Datasheet - Toshiba

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NYG2S0HBAI6 General Description

The TC58NYG2S0HBAI6 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TC58NYG2S0HBAI6 Datasheet (489.64 KB)

Preview of TC58NYG2S0HBAI6 PDF

Datasheet Details

Part number:

TC58NYG2S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

489.64 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58NYG2S0HBAI6 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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