(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

SiC Schottky Barrier Diode

TRS10A65C

TRS10A65F

TRS10E65C

TRS10E65F

TRS10E65H

TRS1-0MCR00V

TRS1-0MCR01V

TRS1-0MLR00V

TRS1-0MSR01EV

TRS1-100MCR00V

TRS1-100MCR01V

TRS1-100MLR00V

TRS1-100MSR01EV

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