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TRS10E65F Datasheet, Toshiba

TRS10E65F diode equivalent, sic schottky barrier diode.

TRS10E65F Avg. rating / M : 1.0 rating-14

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TRS10E65F Datasheet

Features and benefits

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current .

Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

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TRS10E65F Page 1 TRS10E65F Page 2 TRS10E65F Page 3

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