TRS10E65F Datasheet SiC Schottky Barrier Diode

Manufacturer: Toshiba

Datasheet Details

SiC Schottky Barrier Diode TRS10E65F 1.

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS10E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris.