TRS3E65H diode equivalent, sic schottky barrier diode.
(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 9nC (typ.) (4) Low reverse current: IR = 0.4 µA (typ.).
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters
2. Featu.
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