TRS4V65H - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS4V65H
Manufacturer	Toshiba
File Size	376.59 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS4V65H Datasheet
Additional preview pages of the TRS4V65H datasheet.

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit DFN8x8 TRS4V65H 1, 2: N. C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-06-21 Rev.2.0 TRS4V65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbo.

📁 Similar Datasheet

TRS-12VDC-SB-L15 - Relay (TTi)
TRS-24VDC-SB-L15 - Relay (TTi)
TRS-32100-CXX0G - CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver (Optoway Technology)
TRS-32100F-CXX0G - CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver (Optoway Technology)
TRS-32100T-CXX0G - CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver (Optoway Technology)
TRS-32120-CXX0G - CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver (Optoway Technology)
TRS-3280-CXX0G - CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver (Optoway Technology)
TRS-3280F-CXX0G - CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver (Optoway Technology)

Other Datasheets by Toshiba

Published: Jul 19, 2023 |