Datasheet Summary
SiC Schottky Barrier Diode
1. Applications
- Power Factor Correction
- Solar Inverters
- Uninterruptible Power Supplies
- DC-DC Converters
2. Features
(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 12nC (typ.) (4) Low reverse current: IR = 0.6 µA (typ.)
3. Packaging and Internal Circuit
DFN8x8
1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink)
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-05
2023-06-21 Rev.2.0
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