TRS4E65H Datasheet Sic Schottky Barrier Diode

Manufacturer: Toshiba

Overview: SiC Schottky Barrier Diode TRS4E65H 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

Datasheet Details

Part number	TRS4E65H
Manufacturer	Toshiba
File Size	381.72 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS4E65H-Toshiba.pdf

Key Features

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12 nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS4E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-06-21 Rev.2.0 TRS4E65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Note Rating Unit.

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