TRS4V65H Datasheet Sic Schottky Barrier Diode

Manufacturer: Toshiba

Overview: SiC Schottky Barrier Diode TRS4V65H 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

Datasheet Details

Part number	TRS4V65H
Manufacturer	Toshiba
File Size	376.59 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS4V65H-Toshiba.pdf

Key Features

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit DFN8x8 TRS4V65H 1, 2: N. C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-06-21 Rev.2.0 TRS4V65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbo.

TRS4V65H Distributor & Price

Compare TRS4V65H distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Toshiba

Part Number	Description
TRS4E65H	SiC Schottky Barrier Diode
TRS10A65C	SiC Schottky Barrier Diode
TRS10A65F	SiC Schottky Barrier Diode
TRS10E65C	SiC Schottky Barrier Diode
TRS10E65F	SiC Schottky Barrier Diode
TRS10E65H	SiC Schottky Barrier Diode
TRS10V65H	SiC Schottky Barrier Diode
TRS12A65F	SiC Schottky Barrier Diode
TRS12E65H	SiC Schottky Barrier Diode
TRS12V65H	SiC Schottky Barrier Diode