TTA005 Datasheet, Bipolar Transistors, Toshiba

Silicon pnp epitaxial type bipolar transistors

TTA005

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Silicon pnp epitaxial type bipolar transistors.
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(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed

High-Speed Switching
DC-DC Converters 2. Features (1) High DC current gain: hFE = 200 to 500 (IC = -0.5

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