TTA012 Silicon PNP Epitaxial Type Bipolar Transistors
(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3.
• High-Speed Switching
• DC-DC Converters
2. Features
(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC.
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