Bipolar Transistors Silicon NPN Epitaxial Type
TTC011B
1. Applications
• Power Amplifiers
• Audio-Frequency Amplifiers
2. Features
(1) High collector voltage
(2) Small collector output capacitance
(3) High transition frequency
(4) Complementary to TTA006B
: VCEO = 230 V (min)
: Cob = 20 pF (typ.)
: fT = 100 MHz (typ.)
3. Packaging and Internal Circuit (Note)
TTC011B
1. Emitter
2. Collector
3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation
voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical
isolation from surrounding parts.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
Emitter-base voltage
VEBO
5
Collector current (DC)
(Note 1)
IC
1
A
Collector current (pulsed)
(Note 1)
ICP
2
Base current
IB
0.5
Collector power dissipation
PC
1.5
W
Collector power dissipation
(Tc = 25 )
PC
10
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
©2016 Toshiba Corporation
1
Start of commercial production
2014-04
2016-02-09
Rev.1.0
