TTC011B
TTC011B is NPN Transistor manufactured by Toshiba.
Features
(1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) plementary to TTA006B
: VCEO = 230 V (min) : Cob = 20 p F (typ.) : f T = 100 MHz (typ.)
3. Packaging and Internal Circuit (Note)
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current (DC)
(Note 1)
Collector current (pulsed)
(Note 1)
Base current
Collector power dissipation
Collector power dissipation
(Tc = 25 )
Junction temperature
Tj
Storage temperature
Tstg...