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Toshiba Electronic Components Datasheet

TTC011B Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Epitaxial Type
TTC011B
1. Applications
• Power Amplifiers
• Audio-Frequency Amplifiers
2. Features
(1) High collector voltage
(2) Small collector output capacitance
(3) High transition frequency
(4) Complementary to TTA006B
: VCEO = 230 V (min)
: Cob = 20 pF (typ.)
: fT = 100 MHz (typ.)
3. Packaging and Internal Circuit (Note)
TTC011B
1. Emitter
2. Collector
3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation
voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical
isolation from surrounding parts.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
Emitter-base voltage
VEBO
5
Collector current (DC)
(Note 1)
IC
1
A
Collector current (pulsed)
(Note 1)
ICP
2
Base current
IB
0.5
Collector power dissipation
PC
1.5
W
Collector power dissipation
(Tc = 25 )
PC
10
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
©2016 Toshiba Corporation
1
Start of commercial production
2014-04
2016-02-09
Rev.1.0


Toshiba Electronic Components Datasheet

TTC011B Datasheet

NPN Transistor

No Preview Available !

5. Electrical Characteristics
5.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
ICBO VCB = 230 V, IE = 0 A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0 A
Collector-emitter breakdown voltage
V(BR)CEO IC = 10 mA, IB = 0 A
230
DC current gain
hFE
VCE = 5 V, IC = 0.1 A
100
Collector-emitter saturation voltage
VCE(sat) IC = 0.5 A, IB = 50 mA
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
5.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Collector output capacitance
Transition frequency
6. Marking (Note)
Symbol
Test Condition
Min
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
fT
VCE = 10 V, IC = 0.1 A
TTC011B
Typ. Max Unit
200
nA
100
V
320
1.5
V
1.0
Typ. Max Unit
20
pF
100
MHz
Fig. 6.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016 Toshiba Corporation
2
2016-02-09
Rev.1.0


Part Number TTC011B
Description NPN Transistor
Maker Toshiba
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TTC011B Datasheet PDF






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