• Part: TTC011B
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 276.72 KB
Download TTC011B Datasheet PDF
Toshiba
TTC011B
TTC011B is NPN Transistor manufactured by Toshiba.
Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) plementary to TTA006B : VCEO = 230 V (min) : Cob = 20 p F (typ.) : f T = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current (DC) (Note 1) Collector current (pulsed) (Note 1) Base current Collector power dissipation Collector power dissipation (Tc = 25 ) Junction temperature Tj  Storage temperature Tstg...