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TTC011B - NPN Transistor

Key Features

  • (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTA006B : VCEO = 230 V (min) : Cob = 20 pF (typ. ) : fT = 100 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTC011B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard t.

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Datasheet Details

Part number TTC011B
Manufacturer Toshiba
File Size 276.72 KB
Description NPN Transistor
Datasheet download datasheet TTC011B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Epitaxial Type TTC011B 1. Applications • Power Amplifiers • Audio-Frequency Amplifiers 2. Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTA006B : VCEO = 230 V (min) : Cob = 20 pF (typ.) : fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTC011B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4.