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Toshiba Electronic Components Datasheet

TTC013 Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC013
1. Applications
• High-Voltage Switching
• LCD Backlighting
2. Features
(1) High collector breakdown voltage: VCEO = 350 V
(2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)
3. Packaging and Internal Circuit
TTC013
1. Base
2. Collector (Heatsink)
3. Emitter
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
.
VCBO
600
V
Collector-emitter voltage
Emitter-base voltage
VCEO
350
VEBO
7
Collector current (DC)
(Note 1)
IC
0.5
A
Collector current (pulsed)
Base current
(Note 1)
ICP
IB
1
0.25
Collector power dissipation
DC
(Note 2)
PC
1
W
Collector power dissipation
(t = 10 s)
(Note 2)
2.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note 1: Ensure that the junction temperature does not exceed 150.
Note 2: Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface
of 645 mm2)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2015 Toshiba Corporation
1
Start of commercial production
2010-09
2015-08-04
Rev.3.0


Toshiba Electronic Components Datasheet

TTC013 Datasheet

NPN Transistor

No Preview Available !

TTC013
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
VCB = 600 V, IE = 0 A
VEB = 7 V, IC = 0 A
IC = 10 mA, IB = 0 A
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 50 mA
VCE = 5 V, IC = 0.16 A
IC = 0.16 A, IB = 20 mA
IC = 0.16 A, IB = 20 mA
Min Typ. Max Unit
1
µA
1
350
V
80
100
200
30
0.3
V
1.1
5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Switching time (rise time)
Switching time (storage time)
Switching time (fall time)
Symbol
Test Condition
tr
See Figure 5.2.1
tstg
VCC 200 V, RL = 1.25 k,
IB1 = 20 mA, IB2 = 40 mA,
tf
Duty cycle 1%
Min Typ. Max Unit
0.12
µs
3.2
0.17
Fig. 5.2.1 Switching Time Test Circuit
©2015 Toshiba Corporation
2
2015-08-04
Rev.3.0


Part Number TTC013
Description NPN Transistor
Maker Toshiba
PDF Download

TTC013 Datasheet PDF






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