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TTC013 - NPN Transistor

Datasheet Summary

Features

  • (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage . VCBO 600 V Collector-emitter voltage Emitter-base voltage VCEO 350 VEBO 7 Collector current (DC) (Note 1) IC 0.5 A Collector current (pulsed) B.

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Datasheet Details

Part number TTC013
Manufacturer Toshiba
File Size 180.79 KB
Description NPN Transistor
Datasheet download datasheet TTC013 Datasheet
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Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 1. Applications • High-Voltage Switching • LCD Backlighting 2. Features (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage . VCBO 600 V Collector-emitter voltage Emitter-base voltage VCEO 350 VEBO 7 Collector current (DC) (Note 1) IC 0.5 A Collector current (pulsed) Base current (Note 1) ICP IB 1 0.25 Collector power dissipation DC (Note 2) PC 1 W Collector power dissipation (t = 10 s) (Note 2) 2.
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