TTC013 - NPN Transistor

Product Overview

Toshiba

Part number	TTC013
Manufacturer	Toshiba
File Size	180.79 KB
Description	NPN Transistor
Datasheet	TTC013 Datasheet
Additional preview pages of the TTC013 datasheet.

(1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage . VCBO 600 V Collector-emitter voltage Emitter-base voltage VCEO 350 VEBO 7 Collector current (DC) (Note 1) IC 0.5 A Collector current (pulsed) B.

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Published: Jan 20, 2021 |